- silicon-on-insulator structures
- Макаров: SOI-структуры, структуры кремний на изоляторе
Универсальный англо-русский словарь. Академик.ру. 2011.
Универсальный англо-русский словарь. Академик.ру. 2011.
Silicon on insulator — technology (SOI) refers to the use of a layered silicon insulator silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby… … Wikipedia
Silicon nitride — Preferred IUPAC name Silicon nitride … Wikipedia
Insulator (electrical) — Ceramic insulator at railways Conducting copper wire insulate … Wikipedia
Silicon — Not to be confused with the silicon containing synthetic polymer silicone. aluminium ← silicon → phosphorus C ↑ Si ↓ Ge … Wikipedia
insulator — /in seuh lay teuhr, ins yeuh /, n. 1. Elect. a. a material of such low conductivity that the flow of current through it is negligible. b. insulating material, often glass or porcelain, in a unit form designed so as to support a charged conductor… … Universalium
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Integrated circuit — Silicon chip redirects here. For the electronics magazine, see Silicon Chip. Integrated circuit from an EPROM memory microchip showing the memory blocks, the supporting circuitry and the fine silver wires which connect the integrated circuit die… … Wikipedia
High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… … Wikipedia
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Direct bonding — describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.[1] These requirements are specified for the… … Wikipedia
Multigate device — A multigate device or multiple gate field effect transistor(MuGFET) refers to a MOSFET which incorporates more than one gate into a single device. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces … Wikipedia